Paper Title:
Friction-Based In Situ Endpoint Detection of Copper CMP Process
  Abstract

Chemical mechanical polishing (CMP) has been extensively used in the integrate circuit (IC) manufacturing industry as a widely accepted global planarization technology, accurate in situ endpoint detection of CMP process can reduce the product variance, significantly improve yield and throughput. A CMP in situ endpoint detection system, which measured the friction and downforce during CMP process using a specially designed three-axis strain gauge force sensor, was developed. The frictional transition from copper (Cu) to tantalum (Ta) barrier as well as Ta barrier to silicon dioxide (SiO2) dielectric was detected during CMP process. The experimental results showed that the change of friction could be detected when the polished material changed. The developed CMP in situ endpoint detection system is feasible for 300 mm and 450 mm copper CMP process.

  Info
Periodical
Advanced Materials Research (Volumes 53-54)
Edited by
Shengqiang Yang, Shichun Yang and Hang Gao
Pages
125-130
DOI
10.4028/www.scientific.net/AMR.53-54.125
Citation
C. Xu, D. M. Guo, R. K. Kang, Z. J. Jin, F. W. Huo, "Friction-Based In Situ Endpoint Detection of Copper CMP Process", Advanced Materials Research, Vols. 53-54, pp. 125-130, 2008
Online since
July 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hyun Seop Lee, Boum Young Park, Sung Min Park, Hyoung Jae Kim, Hae Do Jeong
Abstract:Chemical mechanical polishing (CMP) has become the preferred technology to achieve global planarization of wafer surfaces. Especially in...
152
Authors: Jian Xiu Su, Xi Qu Chen, Jia Xi Du, Dong Ming Guo, Ren Ke Kang
Abstract:Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer. The nonuniformity of...
119
Authors: Jian Xiu Su, Xi Qu Chen, Jia Xi Du, Xiu Ying Wan, Xin Ning
Abstract:In order to understand the material removal mechanism in the process of chemical mechanical polishing (CMP), the states of abrasives in the...
658
Authors: J.X. Su, Jia Xi Du, X.L. Liu, H.N. Liu, R.K. Kang
Abstract:Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the metal and hard-brittle crystal substrate...
243
Authors: Sheng Fang Zhang, Jian Xiu Su, Jia Xi Du, Ren Ke Kang
Abstract:Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. In...
313