This work aims to obtain fine surface of silicon wafer during precision and ultra precision machining, and presents a new method called semibonded abrasive machining. A semibonded abrasive grinding plate is used in the semibonded abrasive machining. Abrasive particle of 1000# Green SiC and bond named SSB are adopted in the manufacture of the plate. Four plates with different concentration of bond which are 1.5%, 2.5%, 3.5%, 4.5% respectively are made. The paper studies the effect of concentration of bond, the control parameters which include the lapping time, the load, and the rotating velocity of the plate on the surface roughness. Experimental results indicate each plate with different concentration of bond can obtain fine surface roughness. When the load or the rotating velocity increases, there is little effect on the surface roughness, but the material removal rate increases correspondingly. The initial roughness of the silicon wafer surface lapping by the plate could be improved from Ra 0.2μm to Ra 0.02μm in 9 min.