Paper Title:
Cone-Shaped Hard Carbon Films Grown by Inductively Coupled RF Plasma with RF or DC Bias Voltage
  Abstract

A simple method capable of producing uniform, large-area cone arrays of carbon films was found in a planar inductively coupled RF plasma source. The technique employs a DC or RF bias to substrate holder. Si substrates were mechanically pretreated using diamond paste. Cone-shaped carbon crystals preferentially nucleate and grow on the scratches using relatively low bias. Variation of the depositing conditions enables control of the cone density, geometry, and height. The cone arrays are believed to can significantly improve the field emission properties and have a tempting perspective in the microelectromechanical system (MEMS).

  Info
Periodical
Advanced Materials Research (Volumes 53-54)
Edited by
Shengqiang Yang, Shichun Yang and Hang Gao
Pages
325-329
DOI
10.4028/www.scientific.net/AMR.53-54.325
Citation
G.F. Zhang, N. Ren, Y. Ren, X.D. Hou, V. Buck, "Cone-Shaped Hard Carbon Films Grown by Inductively Coupled RF Plasma with RF or DC Bias Voltage", Advanced Materials Research, Vols. 53-54, pp. 325-329, 2008
Online since
July 2008
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$32.00
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