Paper Title:
Characteristic of Si-Doped DLC Films on TC4 and Cr12 Substrates
  Abstract

A series of diamond-like carbon (DLC) films with different Si concentration were prepared by changing the ratio of the number of Si-doped graphite target and pure graphite target. As the Si concentration in the thin film keep on increasing, the concentration of C-Si bond will increase leading to decrease of hardness and stress and increase of friction coefficient. In order to synthesize DLC films on metal substrates 3 types of interlayer have been made. The first and second interlayer is made up Ti/TiCx, and the second is thicker, the third interlayer is made up Ti/TiNx/TiNxCy, with the same thickness of the second. We also prepared DLC films with 6.7 at.% Si concentration on TC4 and Cr12 substrates with the third interlayer, and the thickness, hardness and fiction coefficients is about 0.652m, 4200Hv and 0.15, respectively. The adhesion of films had been greatly strengthened with a proper interlayer, and the value is more than 39N/mm2

  Info
Periodical
Advanced Materials Research (Volumes 53-54)
Edited by
Shengqiang Yang, Shichun Yang and Hang Gao
Pages
343-348
DOI
10.4028/www.scientific.net/AMR.53-54.343
Citation
D. C. Zhao, G. J. Xiao, Z. J. Ma, S. H. Wu, "Characteristic of Si-Doped DLC Films on TC4 and Cr12 Substrates", Advanced Materials Research, Vols. 53-54, pp. 343-348, 2008
Online since
July 2008
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Price
$32.00
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