Paper Title:
Influence of Ar Pressure on the Structure and Electrical Properties of TiO2 Nanofilm Materials
| Periodical | Advanced Materials Research (Volume 531) |
|---|---|
| Main Theme | Advanced Research on Material Engineering, Chemistry, Bioinformatics II |
| Edited by | Helen Zhang and David Jin |
| Pages | 27-30 |
| DOI | 10.4028/www.scientific.net/AMR.531.27 |
| Citation | Li Lin Zhan et al., 2012, Advanced Materials Research, 531, 27 |
| Online since | June, 2012 |
| Authors | Li Lin Zhan, Ying Lian Wang |
| Keywords | Argon Gas Pressure, Electronic Properties, Magnetron Sputtering, TiO2 Nanofilm Materials |
| Price | US$ 28,- |
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Abstract
Highly conductive and transparent TiO2 nano films have been deposited by R.F. magnetron sputtering method on glass substrates. The influence of argon gas pressure on deposition rate, electrical performance and surface morphology has been studied through the ellipsometric thickness gauge, scanning electron microscopy and energy disperse spectroscopy. The results show that, with the rise of argon gas pressure, the deposition rate reduces, resistivity decreases, roughness increases. When Ar pressure is 3.0Pa, the resistivity reached 3.3×105Ω•cm, sputtering pressure is lower, the surface atomic diffusion capacity is stronger, the film is more dence.
