Effect of Electron Beam Injection on the Removal of Metal Impurities in Silicon
| Periodical | Advanced Materials Research (Volume 531) |
|---|---|
| Main Theme | Advanced Research on Material Engineering, Chemistry, Bioinformatics II |
| Edited by | Helen Zhang and David Jin |
| Pages | 55-58 |
| DOI | 10.4028/www.scientific.net/AMR.531.55 |
| Citation | Yi Tan et al., 2012, Advanced Materials Research, 531, 55 |
| Online since | June, 2012 |
| Authors | Yi Tan, Da Yu Pang, Shu Ang Shi, Wei Dong, Rui Xun Zou, Da Chuan Jiang |
| Keywords | Electron Beam Injection, Metal Impurities, Oxidation, Silicon, Solar Energy Materials |
| Price | US$ 28,- |
Electron beam injection(EBI) is a process of gathering the electrons in materials using electron beam(EB). The EBI technology is proposed for purification of silicon particles by removing metal impurities through high-temperature oxidation, EBI, and HF acid washing processes. Analysis of silicon particle morphology after high-temperature oxidation using digital camera and after EBI using scanning electron microscope(SEM) were conducted. Then, the composition of silicon particles was analyzed using inductively coupled plasma(ICP). The silicon particle colours turned bright after EBI; therefore, EBI can change the thickness of SiO2 films in addition to increasing the temperature of the silicon particles. The results show that this technology is effective in removing metal impurities in silicon particles.
