Paper Title:

The Effects of Voltage on Cu-Ce Infiltration Layer of 304 Stainless Steel by Double Glow Plasma Surface Metallurgy

Periodical Advanced Materials Research (Volumes 538 - 541)
Main Theme Materials Processing Technology II
Edited by Liancheng Zhao, Haowei Wang and Changfa Xiao
Pages 298-301
DOI 10.4028/www.scientific.net/AMR.538-541.298
Citation Feng Tang et al., 2012, Advanced Materials Research, 538-541, 298
Online since June, 2012
Authors Feng Tang, Jin Yong Xu, Yan Tang, Cheng Gao, Peng Gao, Bo Gao, Wei Heng Mo, Yuan Ming Li
Keywords Cathode Voltage, Cu-Ce Infiltration, Diffusion Layer, Source Voltage
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Abstract

The Cu-Ce infiltration layer was formed on 304 Stainless Steel surface by double glow plasma surface metallurgy technology. The effects of source voltage and cathode voltage on surface alloying concentration, surface hardness and infiltration layer depth were analyzed by comparative test. The results showed: In the experimental range, the contents of Cu and Ce, surface hardness, deposition layer depth increase with the source voltage increasing, which is contrary to the cathode voltage; the diffusion layer depth increases with either voltage increasing in a certain range.