A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn3N2 Film on Glass
| Periodical | Advanced Materials Research (Volume 545) |
|---|---|
| Main Theme | Advancement of Materials and Nanotechnology II |
| Edited by | Norlida Kamarulzaman |
| Pages | 294-299 |
| DOI | 10.4028/www.scientific.net/AMR.545.294 |
| Citation | L.Y. Low et al., 2012, Advanced Materials Research, 545, 294 |
| Online since | July, 2012 |
| Authors | L.Y. Low, Mat Johar Abdullah, N.H. Al-Hardan |
| Keywords | ANZO, RF Sputtering, Thermal Oxidation |
| Price | US$ 28,- |
We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2 film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.