Paper Title:

A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn3N2 Film on Glass

Periodical Advanced Materials Research (Volume 545)
Main Theme Advancement of Materials and Nanotechnology II
Edited by Norlida Kamarulzaman
Pages 294-299
DOI 10.4028/www.scientific.net/AMR.545.294
Citation L.Y. Low et al., 2012, Advanced Materials Research, 545, 294
Online since July, 2012
Authors L.Y. Low, Mat Johar Abdullah, N.H. Al-Hardan
Keywords ANZO, RF Sputtering, Thermal Oxidation
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Abstract

We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2 film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.