Investigation of Aluminium Diffusion into an Amorphous Silicon Thin Film at High Temperature by In Situ Spectroscopic Ellipsometry
| Periodical | Advanced Materials Research (Volumes 55 - 57) |
|---|---|
| Main Theme | Smart Materials |
| Edited by | Tawee Tunkasiri |
| Pages | 449-452 |
| DOI | 10.4028/www.scientific.net/AMR.55-57.449 |
| Citation | W. Luangtip et al., 2008, Advanced Materials Research, 55-57, 449 |
| Online since | August, 2008 |
| Authors | W. Luangtip, S. Rotbuathong, P. Chindaudom, M. Horphatum, V. Patthanasetthakul, P. Eiamchai, T. Srikirin |
| Keywords | Bruggeman EMA, Diffusion, Spectroscopic Ellipsometry (SE) |
| Price | US$ 28,- |
This work is to study the diffusion of Al into amorphous silicon (a-Si) thin film at the elevated temperature by in-situ Spectroscopic Ellipsometry (SE). The sputtered a-Si film 60 nm thick on an optically opaque Al (100 nm) layer on silicon wafer was heated in a temperature controlled heating sample stage from room temperature to 300°C and slowly cooled down to room temperature while the dynamic SE data were measured. It was found that the ∆ and Ψ spectra began to change quickly at 200°C until the temperature reached 250°C, then continue to changed very slowly until 300°C. No significant change could be observed while the sample was cooling down to room temperature. The full spectral SE measurements were also taken at every 50°C steps and used to model the diffusion of Al into the top a-Si film. The interface layer due to diffusion was modeled by Bruggeman Effective Medium Approximation (EMA) theory as the mixture of Al and Si.
