Titanium dioxide, TiO2, thin films were deposited on unheated Si (100) wafers by two cathodes sputtering system. However, during the deposition of TiO2 films only one cathode was used. A pure metallic titanium was used as a sputtering target. Argon and oxygen were used as sputtered gas and reactive gas, respectively. TiO2 films were deposited at the argon and oxygen ratio of 1:4 and a total pressure of 5.0 x 10-3 mbar. The distance between the target and the center point of substrate was 12 cm. For each deposition of TiO2 films, the position of substrate was changed every 2 cm on the radial position of the cathode. The deposition time for each deposition was 60 min. The films were characterized by X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). The XRD results and TEM images show that the crystalline rutile TiO2 films can be successfully deposited on an unheated substrate.