Diamond-like carbon (DLC) films have been deposited on silicon substrates using microwave plasma enhanced chemical vapor deposition (PE-CVD) process of CH4 in H2 gas mixture. The well-faceted good quality DLC film with distinct diamond Raman spectroscopic characteristics are found at low CH4 concentration. Schottky barrier diode (SBD) structures are fabricated onto the grown DLC films using Ti/Au and Al as ohmic and rectifying contacts, respectively. The responses of DLC-SBD to DC and time varying signals have been studied. The frequency dependent response results are compared to models, which includes as input parameters the depletion and bulk regions resistances and capacitances trap effects, and SBD parameters of which extracted from the DC I-V characteristics. It is found that the frequency dependent properties of DLC-SBD can be associated with deep trap states inside the DLC material rather than with only the SBD geometrical structure.