Paper Title:
Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method
  Abstract

The total leakage current in silicon p-n junction diodes compatible with 0.8 µm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density.

  Info
Periodical
Advanced Materials Research (Volumes 55-57)
Main Theme
Edited by
Tawee Tunkasiri
Pages
765-768
DOI
10.4028/www.scientific.net/AMR.55-57.765
Citation
W. Pengchan, T. Phetchakul, A. Poyai, "Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method ", Advanced Materials Research, Vols. 55-57, pp. 765-768, 2008
Online since
August 2008
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$32.00
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