Paper Title:
Inducing Layer Dependence of BiFeO3 Based Multilayer Capacitors
  Abstract

Multifunctional BiFeO3 (BFO) thin films were deposited on Bi3.15Nd0.85Ti3O12 (BNdT)/Pt and Pb(Zr1−x,Tix)O3 (PZT)/Pt substrates respectively by sol-gel process. The ferroelectric properties were studied for Metal-Ferroelectric-Mental (MFM) capacitors. The MFM structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of multilayer thin films achieved. The remnant polarization (2Pr) of the BFO/PZT and BFO/PZT multilayer capacitors were 45.1μC/cm2 and 23.2μC/cm2, respectively at the applied voltage of 8V. The leakage current of Pt/BFO/BNdT/Pt is about 3×10-5A/㎝2 at applied voltage of 4V, one order smaller than Pt/BFO/PZT/Pt capacitor. For the BFO/BNdT/Pt, it exhibited a weak saturated ferromagnetic response at room temperature and the multilayer was anti-ferromagnetic. However, for the BFO/PZT/Pt, well-developed M-H loops together with remnant magnetizations can be observed in at room temperature. The highest saturation magnetizations (Ms) of both capacitors were measured to be 2.47emu/cm3.

  Info
Periodical
Advanced Materials Research (Volumes 60-61)
Edited by
Xiaohao Wang
Pages
256-259
DOI
10.4028/www.scientific.net/AMR.60-61.256
Citation
Y. F. Luo, D. Xie, Y. Y. Zang, R. Song, T. L. Ren, L. T. Liu, "Inducing Layer Dependence of BiFeO3 Based Multilayer Capacitors", Advanced Materials Research, Vols. 60-61, pp. 256-259, 2009
Online since
January 2009
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