The stress gradient of a deposited thin-film is a mechanical parameter that affects the performance of MEMS devices, so in-situ measuring stress gradient of a thin-film is great significant. A new in-situ measuring method based on a center-anchored circular plate is presented. The Mirau interferometer has been used to measure the out-of-plane height at the edge of circular plate, then the curvature radius of the plate and the stress gradient of the film can be calculated. The measuring method has been verified by CoventorWare. The accuracy of the presented measuring method is ideal. The advantages of the method also have been discussed.