Paper Title:
Analysis of Tunneling Piezoresistive Effect of P-Type Polysilicon Nanofilms
  Abstract

The polysilicon nanofilms have significant piezoresistive characteristics. In this paper, an analysis of tunneling piezoresistive effect of p-type polysilicon nanofilms is presented based on the experimental data. The analysis results show that the tunneling piezoresistive effect is much remarkable than piezoresistive effect of neutral region, and the former is about 1.3 to 1.5 times of the latter. The higher is doping concentration, the more remarkable tunneling piezoresistive effect is. This advantage can be utilized to improve the temperature characteristics of polysilicon piezoresistive sensor.

  Info
Periodical
Advanced Materials Research (Volumes 60-61)
Edited by
Xiaohao Wang
Pages
89-93
DOI
10.4028/www.scientific.net/AMR.60-61.89
Citation
X. B. Lu, X. W. Liu, R. Y. Chuai, C. Z. Shi, M. X. Huo, W. P. Chen, "Analysis of Tunneling Piezoresistive Effect of P-Type Polysilicon Nanofilms", Advanced Materials Research, Vols. 60-61, pp. 89-93, 2009
Online since
January 2009
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$32.00
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