Paper Title:
Kinetic Monte Carlo Simulation for the Evolution of Complex Surface in Fabrication of MEMS Devices
  Abstract

This paper introduces a octree search Kinetic Monte Carlo(OS-KMC) that combines the topological requirements for representing an evolving multivalued surface using minimal memory and an efficient search algorithm for the realization of the KMC time evolution. In addition, the data structure for OS-KMC also provides a nature way to generate hexahedral element meshes for the integration between simulator and performance analysis tool. The density of mesh grid and the refinement of the hexahedral element can be controlled in this octree based mesh generation method. In simulating surface morphology during wet etching and micro structure formed by composite MEMS processes, the octree search KMC shows good simulation results with better calculation performance. The octree structure enables the Monte Carlo solutions for large scale problems with complex dynamic surfaces.

  Info
Periodical
Advanced Materials Research (Volumes 60-61)
Edited by
Xiaohao Wang
Pages
99-104
DOI
10.4028/www.scientific.net/AMR.60-61.99
Citation
Y. Xing, X. L. Qiu, "Kinetic Monte Carlo Simulation for the Evolution of Complex Surface in Fabrication of MEMS Devices", Advanced Materials Research, Vols. 60-61, pp. 99-104, 2009
Online since
January 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiao Guang Guo, Dong Ming Guo, Ren Ke Kang, Zhu Ji Jin
Abstract:Molecular dynamics (MD) simulation is carried out to analyze the effects of abrasive ngrain size and cut depth on monocrystal silicon...
286
Authors: Shuji Ogata, Takahisa Kouno
Abstract:There is growing demand to perform dynamic, atomistic computer-simulation of nano-scaled interfaces. For dynamic simulation of interesting...
57
Authors: Iván Santos, Luis Alberto Marqués, Lourdes Pelaz, Pedro Lopez, María Aboy
Abstract:We focus this work on multi-scale modeling of the ion-beam-induced amorphization and recrystallization in Si, although our scheme can be...
71
Authors: Zhu Wang, Ke Dong Bi, Yun Fei Chen
Abstract:A physical model of the bulk-nanochannel-bulk with buffer bathes has been set up in this paper using molecular dynamics (MD) simulation. The...
658
Authors: Xiao Zhong Song, Jie Wu
Chapter 13: Materials and Design
Abstract:Silicon-hydrogen crystalline models are proposed to estimate theoretical hydrogen storage capacity in porous silicon media with nanostructure...
2322