Paper Title:

Dimensional Effect on DIBL in Silicon Nanowire Transistors

Periodical Advanced Materials Research (Volume 626)
Main Theme Advanced Materials Engineering and Technology
Edited by Mohd Mustafa Al Bakri Abdullah, Liyana Jamaludin, Rafiza Abdul Razak, Zarina Yahya and Kamarudin Hussin
Pages 190-194
DOI 10.4028/www.scientific.net/AMR.626.190
Citation Yasir Hashim et al., 2012, Advanced Materials Research, 626, 190
Online since December, 2012
Authors Yasir Hashim, Othman Sidek
Keywords DIBL, Nanowire, Silicon, Transistor
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Drain-induced barrier lowering (DIBL) is crucial in many applications of silicon nanowire transistors. This paper determined the effect of the dimensions of nanowires on DIBL. The MuGFET simulation tool was used to investigate the characteristics of the transistors. The transfer characteristics of transistors with different dimensions were simulated. The results show that longer nanowires with smaller diameters and lower oxide thickness decrease DIBL and tend to possess the best transistor characteristics.

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