Paper Title:
Dimensional Effect on DIBL in Silicon Nanowire Transistors
  Abstract

Drain-induced barrier lowering (DIBL) is crucial in many applications of silicon nanowire transistors. This paper determined the effect of the dimensions of nanowires on DIBL. The MuGFET simulation tool was used to investigate the characteristics of the transistors. The transfer characteristics of transistors with different dimensions were simulated. The results show that longer nanowires with smaller diameters and lower oxide thickness decrease DIBL and tend to possess the best transistor characteristics.

  Info
Periodical
Edited by
Mohd Mustafa Al Bakri Abdullah, Liyana Jamaludin, Rafiza Abdul Razak, Zarina Yahya and Kamarudin Hussin
Pages
190-194
DOI
10.4028/www.scientific.net/AMR.626.190
Citation
Yasir Hashim et al., 2012, Advanced Materials Research, 626, 190
Online since
December 2012
Price
US$ 28,-
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