Paper Title:
Influence of Buffer Layers on the Structure and Optical Properties of Na-Doped ZnO Thin Films Prepared by Sol–Gel Method
  Abstract

Na-doped ZnO thin films on Si (100) substrates and on pure ZnO buffer layers prepared by sol-gel method, with the pure ZnO buffer layer annealing at 1073K for 90 min. X-ray diffraction (XRD) analyses revealed that all the films had a polycrystalline wurtzite structure and high c-axis preferred orientation. Photoluminescence(PL) spectra showed that the thin films produced strong emissions near ultraviolet(UV) and weak defect-related deep-level emission in visible regions. In addition, the effects of pure ZnO buffer layers on the structural and optical properties are discussed.

  Info
Periodical
Edited by
Takashi Goto, Yibing Cheng, Zhengyi Fu and Lianmeng Zhang
Pages
254-257
DOI
10.4028/www.scientific.net/AMR.66.254
Citation
D. Y. Wang, J. Zhou, G. Z. Liu, "Influence of Buffer Layers on the Structure and Optical Properties of Na-Doped ZnO Thin Films Prepared by Sol–Gel Method", Advanced Materials Research, Vol. 66, pp. 254-257, 2009
Online since
April 2009
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