Paper Title:
Effect of Bi Doping on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Compound
  Abstract

The single phase of Bi-doped Mg2Si0.5Sn0.5 compounds have been successfully fabricated by solid state reaction-spark plasma sintering (SPS). The effect of Bi doping concentration on the thermoelectric properties of Mg2Si0.5Sn0.5 is mainly investigated. The doping of Bi atom introduces impurity energy to Mg2Si0.5Sn0.5 compounds, which results in the increase of carrier concentration ( ), meanwhile it causes the increase of crystal distortion, enhancing the scatter of phonon. The results show that with the increasing of Bi doping content, the electrical conductivity (σ) increase, the absolute Seebeck coefficient ( ) and thermal conductivity ( ) decrease slightly in the measuring temperature range between 300 K and 800K. When the doping concentration of Bi is up to 2.5at% (nominal molar percent), the sample shows a maximum value of the figure of merit, ZT, is 0.78 at 800K.

  Info
Periodical
Edited by
Takashi Goto, Yibing Cheng, Zhengyi Fu and Lianmeng Zhang
Pages
33-36
DOI
10.4028/www.scientific.net/AMR.66.33
Citation
W. J. Luo, M. J. Yang, Q. Shen, H. Y. Jiang, L. M. Zhang, "Effect of Bi Doping on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Compound", Advanced Materials Research, Vol. 66, pp. 33-36, 2009
Online since
April 2009
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$32.00
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