Paper Title:
Experimental Study on Parameter Optimization of Silicon Wafer CMP Using Composite Abrasives Slurry
  Abstract

In order to increase the material removal rate of silicon wafer, composite abrasives slurry was used in CMP. The mechanism of interaction between silica abrasives and polymer particles was analyzed. Small silica abrasives were seen to attach onto the surface of the polymer particles. Composite abrasives slurry was obtained by adding polymer particles into single abrasive slurry. Three key parameters, the concentration of colloidal silica, the concentration of polymer particle and the speed of polishing, which influence the material removal rate of silicon wafer were analyzed by Taguchi method and the optimal parameters were obtained. Experimental results indicated that the maximum material removed rate of 353nm/min was obtained when optimal craft parameters of 5% colloidal silica, 3% polymer particle, 50rpm plate and carrier rotation speed were selected.

  Info
Periodical
Advanced Materials Research (Volumes 69-70)
Edited by
Julong Yuan, Shiming Ji, Donghui Wen and Ming Chen
Pages
214-218
DOI
10.4028/www.scientific.net/AMR.69-70.214
Citation
X. F. Xu, H.T. Ma, B.X. Ma, W. Peng, "Experimental Study on Parameter Optimization of Silicon Wafer CMP Using Composite Abrasives Slurry", Advanced Materials Research, Vols. 69-70, pp. 214-218, 2009
Online since
May 2009
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Price
$32.00
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