Paper Title:
Properties of High-Quality LaAlO3 Film Deposited by In Situ Plasma-Enhanced-Atomic-Layer-Deposition
  Abstract

Plasma enhanced atomic layer deposition (PEALD) method can decrease film growing temperature, and allow in-situ plasma treatment. LaAlO3 films were deposited with PEALD at 180°C. High resolution transmission electron microscopy (HRTEM) results exhibited amorphous microstructure of both films even after rapid thermal annealing (RTA) at 800°C. X-ray photoelectron spectroscopy (XPS) spectra suggested that the valence-band offset between the LaAlO3 film and the substrate was 3.3 eV. The electrical experimental results indicated that the leakage current densities were 0.10mA/cm2 and 0.03mA/cm2 respectively at a gate bias of |Vg-Vfb|=1V and the equivalent oxide thicknesses (EOT) of them were 1.2 nm and 1.4 nm, respectively. The densities of interfacial states were calculated to be 1.70×1012eV-1cm-2 and 1.09×1012eV-1cm-2, respectively.

  Info
Periodical
Chapter
Chapter 1: Novel and Advanced Materials, Materials Science and Technologies
Edited by
Qingzhou Xu
Pages
24-28
DOI
10.4028/www.scientific.net/AMR.721.24
Citation
D. Cao, X. H. Cheng, T. T. Jia, D. W. Xu, L. Zheng, Z. J. Wang, C. Xia, Y. H. Yu, "Properties of High-Quality LaAlO3 Film Deposited by In Situ Plasma-Enhanced-Atomic-Layer-Deposition", Advanced Materials Research, Vol. 721, pp. 24-28, 2013
Online since
July 2013
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$32.00
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