Paper Title:
Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI
  Abstract

Conventional super-junction lateral double diffused MOSFET (SJ-LDMOS) fabricated on Silicon on Insulator (SOI) substrate suffers from low breakdown voltage under the same on-resistance due to substrate-assisted depletion effect. To suppress this effect, it is important to find the charge density in the inversion layer under buried oxide. In this paper, we propose a charge density equation and its formulation. The results were used in a 3D device simulator to optimize the device structure. The experimental results confirm that the equation is useful to optimize device performance. The breakdown voltage of structure increased 54% and on-state-resistance decreased 58% compared to conventional SJ device. The device fabrication procedure is fully compatible with mainstream SOI CMOS process.

  Info
Periodical
Chapter
Chapter 2: Advanced Manufacturing and Control Technologies
Edited by
Qingzhou Xu
Pages
521-526
DOI
10.4028/www.scientific.net/AMR.721.521
Citation
C. Xia, X. H. Cheng, Z. J. Wang, D. W. He, D. Cao, T. T. Jia, Y. H. Yu, D. S. Shen, "Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI", Advanced Materials Research, Vol. 721, pp. 521-526, 2013
Online since
July 2013
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Price
$32.00
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