Paper Title:
Risk Assessment for Niclosamide Residues in Water and Sediments from Nan Ji Shan Island within Poyang Lake Region, China
  Abstract

The objective of this study was to determine and assess niclosamide residue levels in the Nan Ji Shan island within Poyang Lake Region, from March to June, September, October and December of 2012. Water and sediment samples from the Nan Ji Shan island were extracted with alkaline ethylacetate,and were detected by high performance liquid chromatography (HPLC). Niclosamide residues were detected in all water and sediment samples in varying concentrations during the two periods using molluscicide, niclosamide residues concentration water samples ranged from 0.01 to 0.038 mg/L, and from 0.1 to 0.473 mg/kg in sediments. According to the guidelines for potential risk assessment drawn up by the US Environmental Protection Agency, the risk of niclosamide residue was assessed. The results indicated that it would cause greater effect on fish, invertebrates and aquatic plants, but the influence on human and avian was relatively smaller.

  Info
Periodical
Chapter
Chapter 3: Bio and Sustainable Manufacturing Technologies
Edited by
Qingzhou Xu
Pages
608-612
DOI
10.4028/www.scientific.net/AMR.721.608
Citation
D. G. Huang, J. H. Zhen, S. Q. Quan, M. Liu, L. Liu, "Risk Assessment for Niclosamide Residues in Water and Sediments from Nan Ji Shan Island within Poyang Lake Region, China", Advanced Materials Research, Vol. 721, pp. 608-612, 2013
Online since
July 2013
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xiao Hong Yang, Jiang Jie Wang, Jun Yan Ge, Jin Sheng Wang, Feng Qiang Dong
Chapter 4: Micro/Nano Materials
Abstract:The silver nanoparticles with 42 nm in diameter were synthesized under control of cetyltrimethyl ammonium bromide (CTAB). CTAB acted not only...
527
Authors: Irina A. Gudim, Evgeny V. Eremin, Maksim S. Molokeev, Vladislav L. Temerov, Nikita V. Volkov
Chapter 3: Magnetoelectronic and Magnetoresistive Materials, Spin Polarized Transport
Abstract:HoAl3-xGax(BO3)4 (0 ≤ х ≤ 3) single crystals were grown from...
364