A Novel Single Step Thinning Process for Extremely Thin Si Wafers |
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| Journal | Advanced Materials Research (Volumes 76 - 78) |
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| Volume | Advances in Abrasive Technology XII |
| Edited by | Han Huang, Liangchi Zhang, Jun Wang, Zhengyi Jiang, Libo Zhou, Xipeng Xu and Tsunemoto Kuriyagawa |
| Pages | 434-439 |
| DOI | 10.4028/www.scientific.net/AMR.76-78.434 |
| Citation | Y.B. Tian et al., 2009, Advanced Materials Research, 76-78, 434 |
| Online since | June, 2009 |
| Authors | Y.B. Tian, Li Bo Zhou, Jun Shimizu, H. Sato, Ren Ke Kang |
| Keywords | Chemo-Mechanical Grinding (CMG), Grinding, ICGW, Silicon Wafer, Thinning |
| Abstract | The demand for extremely-thin Si wafers is expanding. Current manufacturing technologies are meeting great challenges with the continuous decrease in Si wafer thickness. In this study, a novel single step thinning process for extremely thin Si wafers was put forward by use of an integrated cup grinding wheel (ICGW) in which diamond segments and chemo-mechanical grinding (CMG) segments are alternately allocated along the wheel periphery. The basic machining principle and key technologies were introduced in detail. Grinding experiments were performed on 8-in. Si wafers with a developed ICGW to explore the minimal wafer thickness and grinding performance. The experimental results indicate that the proposed grinding process with the ICGW is an available thinning approach for extremely thin Si wafer down to 15μm |
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