Blasting of Affected Layer of Silicon Surface Sliced by Wire EDM |
| Journal |
Advanced Materials Research (Volumes 76 - 78) |
| Volume |
Advances in Abrasive Technology XII |
| Edited by |
Han Huang, Liangchi Zhang, Jun Wang, Zhengyi Jiang, Libo Zhou, Xipeng Xu and Tsunemoto Kuriyagawa |
| Pages |
440-444 |
| DOI |
10.4028/www.scientific.net/AMR.76-78.440 |
| Online since |
June, 2009 |
| Authors |
Hirofumi Hidai, Taro Sugita, Hitoshi Tokura |
| Keywords |
Abrasive Blast, Modified Layer Removal, Polycrystalline Silicon, Solar Cell |
| Abstract |
Polycrystalline ingot slicing by wire electric discharge machining (W-EDM) has been investigated to reduce kerf loss and wafer thickness. In order to use the sliced wafers for semiconductor devices, the modified surface layer induced by W-EDM must be removed. In this paper, we have demonstrated the elimination of the layer by abrasive blasting. Three types of abrasives were blasted at a speed of 100 m/s. The surfaces blasted with WA #1000 and GC #1000 were smoother than that sliced with a wire saw. The modified layer induced by W-EDM slicing could be removed by blasting with WA #1000 while scanning the surface three times. Solar cells were fabricated using wafers with the blasted surface with an efficiency of 15.2%, which was almost the same as that of cells fabricated from the wire-sliced wafers. |
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