Paper Title:
Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD
  Abstract

Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.

  Info
Periodical
Advanced Materials Research (Volumes 79-82)
Edited by
Yansheng Yin and Xin Wang
Pages
1535-1538
DOI
10.4028/www.scientific.net/AMR.79-82.1535
Citation
L. Y. Kong, F. Yang, J. Ma, C. N. Luan, Z. Zhu, "Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 1535-1538, 2009
Online since
August 2009
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Price
$32.00
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