Paper Title:
Preparation of Nitrogen Doped ZnO Dilute Ferromagnetic Semiconductor by Magnetron Sputtering
  Abstract

ZnO/Zn3N2 multilayer films were synthesized on slide glass substrates by radio-frequency (RF) magnetron sputtering technology with RF powers of 100 W. After annealing in oxygen atmosphere for 3 hours at the temperature changed from 473 K to 873 K, the multilayer films were changed to be single-layer films of nitrogen doped ZnO dilute ferromagnetic semiconductor. The structural, elementary constituents, carrier concentration and magnetic properties of the films were investigated with X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), hall-effect measurements and vibrating sample magnetometer (VSM) magnetization measurements, respectively. The XRD measurements revealed that the nitrogen doped ZnO films had a wurtzite structure with their crystal (002) directions oriented along the c-axis of the substrate. Hall-effect measurements indicated that nitrogen doped ZnO thin film, annealed at 673 K for 3 hour, had the best p-type properties. Carrier concentration and resistivity of the film was 3.12 × 1017 cm-3 and 93 Ωcm, respectively. A Lakeshore 7407 vibrating sample magnetometer was employed for magnetization (M) versus applied field strength (H) investigations of these thin films. A typical hysteresis loop was found in the observed M–H curve of the samples, demonstrated that the films annealed at 673 K for 3 hour were ferromagnetic at 300 K. The XPS analysis revealed the presence of Zn-N chemical bonding in the films. It suggested that nitrogen atoms are substituted at the oxygen sites of the ZnO films and mediate the ferromagnetic properties of the films.

  Info
Periodical
Advanced Materials Research (Volumes 79-82)
Edited by
Yansheng Yin and Xin Wang
Pages
1827-1830
DOI
10.4028/www.scientific.net/AMR.79-82.1827
Citation
W. S. Lin, W. Wei, W. Heng, "Preparation of Nitrogen Doped ZnO Dilute Ferromagnetic Semiconductor by Magnetron Sputtering", Advanced Materials Research, Vols. 79-82, pp. 1827-1830, 2009
Online since
August 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Rajendraprasad Reddy, Mutsumi Sugiyama, K. T. Ramakrishna Reddy
Chapter 13: Thin Films
Abstract:Nickel-doped ZnO thin films with different Ni contents (0 - 15%) were deposited on glass substrate at 350°C by a spray pyrolysis technique....
1423