Paper Title:
Single Crystalline SnO2:In Films Prepared on Sapphire by MOCVD
  Abstract

1-12% {atomic ratio of In/(In+Sn)} indium-doped tin oxide (SnO2:In) films were successfully prepared on sapphire substrates by MOCVD method. HRTEM image showed that the obtained films were single crystalline films. The X-ray photoelectron spectroscopy showed the existence of non-stoichiometric oxide on the film surface. The Hall mobility and carrier concentration of the SnO2:In films varied with the In content increasing.

  Info
Periodical
Advanced Materials Research (Volumes 79-82)
Edited by
Yansheng Yin and Xin Wang
Pages
759-762
DOI
10.4028/www.scientific.net/AMR.79-82.759
Citation
Z. G. Song, F. Ji, J. Ma, T. Ning, X. A. Pei, Y. L. Tan, "Single Crystalline SnO2:In Films Prepared on Sapphire by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 759-762, 2009
Online since
August 2009
Keywords
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Md. Mosharaf Hossain Bhuiyan, Tsuyoshi Ueda, Tomoaki Ikegami
Abstract:SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed...
223
Authors: Xu Li, Li Guan, Chong Liu, Feng Cong, Zhi Ping Yang
Abstract:In this study, a novel green phosphor Ca2SrAl2O6:Ce3+,Tb3+ were prepared by solid state method. The crystal structure and particle morphology...
1823
Authors: Mei Ping Jiang, Meng Zhao, Jin Hua Li
Optical/Electronic/Magnetic Materials
Abstract:Using vanadyl acetylacetonate (C10H14O5V) as precursor, use Tantalum Ethoxide...
2177
Authors: M. Rajendraprasad Reddy, Mutsumi Sugiyama, K. T. Ramakrishna Reddy
Chapter 13: Thin Films
Abstract:Nickel-doped ZnO thin films with different Ni contents (0 - 15%) were deposited on glass substrate at 350°C by a spray pyrolysis technique....
1423
Authors: Ting Ting Yao, Hong Lin Liu, Wan Yu Ding, Dong Ying Ju, Wei Ping Chai
Abstract:N-doped TiO2 films were prepared by using N ion beams to bombard TiO2 films surface. By controlling the metal ultrahigh vacuum gat valve,...
302