Paper Title:
Transparent Conducting SnO2:Zn Films Prepared on Sapphire by MOCVD
  Abstract

1-10% {atomic ratio of Zn/(Zn+Sn)} zinc-doped tin oxide (SnO2:Zn) films were successfully prepared on sapphire substrates by MOCVD method. The structural, optical and electrical properties of the SnO2:Zn films were investigated. The obtained films were high quality crystalline films with high a-axis orientation. The optical transmittance of the SnO2:Zn films with the thickness 1-1.4μm was about 80% in visible region. The Hall mobility and carrier concentration of the SnO2:Zn films varied with the Zn content increasing.

  Info
Periodical
Advanced Materials Research (Volumes 79-82)
Edited by
Yansheng Yin and Xin Wang
Pages
771-774
DOI
10.4028/www.scientific.net/AMR.79-82.771
Citation
Z. G. Song, F. Ji, J. Ma, T. Ning, X. A. Pei, Y. L. Tan, "Transparent Conducting SnO2:Zn Films Prepared on Sapphire by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 771-774, 2009
Online since
August 2009
Keywords
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$32.00
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