Paper Title:
Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy
  Abstract

(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/µm. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

  Info
Periodical
Advanced Materials Research (Volumes 79-82)
Edited by
Yansheng Yin and Xin Wang
Pages
823-826
DOI
10.4028/www.scientific.net/AMR.79-82.823
Citation
X.Y. Zhou, Y. Zhou, G.Y. Wang, Y. Wang, H. L. W. Chan, C.L. Choy, G. Z. Cao, "Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy", Advanced Materials Research, Vols. 79-82, pp. 823-826, 2009
Online since
August 2009
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