Paper Title:
Influences on Optoelectronic Properties of Damp Heat Stability of AZO and GZO for Thin Film Solar Cells
  Abstract

This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4 Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72% and 11.97%, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85°C and 85% relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films.

  Info
Periodical
Advanced Materials Research (Volumes 79-82)
Edited by
Yansheng Yin and Xin Wang
Pages
923-926
DOI
10.4028/www.scientific.net/AMR.79-82.923
Citation
W. T. Yen, J. H. Ke, H. J. Wang, Y. C. Lin, J. L. Chiang, "Influences on Optoelectronic Properties of Damp Heat Stability of AZO and GZO for Thin Film Solar Cells", Advanced Materials Research, Vols. 79-82, pp. 923-926, 2009
Online since
August 2009
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