Paper Title:
Crack Tip Dislocations Observed by Combining Scanning Transmission Electron Microscopy and Computed Tomography
  Abstract

Crack tip dislocations and dislocations introduced by three point-bending tests at high temperature are observed by combinating scanning transmission electron microscopy and computed tomography (STEM-CT). Commercially available P type (001) single crystal silicon wafers were employed. A series of STEM image was acquired from -60º to +60º in tilt range with 2º in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. Reconstructed images of dislocations revealed dislocation structures in three-dimension.

  Info
Periodical
Advanced Materials Research (Volumes 89-91)
Edited by
T. Chandra, N. Wanderka, W. Reimers , M. Ionescu
Pages
473-478
DOI
10.4028/www.scientific.net/AMR.89-91.473
Citation
S. Sadamatsu, M. Tanaka, K. Higashida, K. Kaneko, M. Mitsuhara, S. Hata, M. Honda, "Crack Tip Dislocations Observed by Combining Scanning Transmission Electron Microscopy and Computed Tomography", Advanced Materials Research, Vols. 89-91, pp. 473-478, 2010
Online since
January 2010
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$32.00
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