Paper Title:
Stress Relaxation in Sandwiched Si3N4/Al/Si3N4 Thin Films
  Abstract

An in-situ investigation was performed on the stress relaxation of sandwiched Si3N4/Al/Si3N4 thin films by using multi-beam optical stress sensor (MOSS), a developed technique for substrate curvature measurement. Furthermore, the microstructures of the thin films were characterized by several analyzing techniques, such as X-ray Photoelectron Spectroscopy (XPS), Field Emission Scanning Electron Microscope (FE-SEM) and X-ray energy dispersive spectroscopy (EDS). The results indicated sharp rise and drop of the residual stress due to the cracks of Si3N4 surface layer or the separation of Al particles during annealing process. An appropriate model was suggested to interpret this phenomenon.

  Info
Periodical
Advanced Materials Research (Volumes 89-91)
Edited by
T. Chandra, N. Wanderka, W. Reimers , M. Ionescu
Pages
91-96
DOI
10.4028/www.scientific.net/AMR.89-91.91
Citation
G.R. Chang, F. Ma, B. Ma, K. W. Xu, "Stress Relaxation in Sandwiched Si3N4/Al/Si3N4 Thin Films", Advanced Materials Research, Vols. 89-91, pp. 91-96, 2010
Online since
January 2010
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$32.00
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