Chemical mechanical polishing technique is more frequently adopted for planarization in integrated circuit fabrication. The silica abrasives in colloidal state are fabricated with the sodium silicate solution as raw materials through the polymerization reaction among silicic acid molecules. By continuous injection of silicic acid into the preexisting silica solution, the diameter of silica nanoparticles increases. The different sized silica nanoparticles are imaged by scanning electron microscopy, and the dried silica are characterized by X-ray diffraction and thermal analysis. The polishing test on silicon wafer with as-fabricated silica abrasives shows that the surface flatness reaches 1.1 nm roughness, however, micro scratches are still present in the surface.