Paper Title:
The Effect of Ion Implantation on ISFET-Sensing Membrane
  Abstract

This research studied the effect of ion implantation on electrical properties of ISFETs. In the experiments the sensing membrane area were implanted with 3 types of ions (Boron(B), Phosphorus(P), and Arsenic(As)). After the implantation without annealing, the IV-characteristics of Source/Drain (P-N junction) of ISFET were performed and compared with the behaviour before implantation. In addition, the response to acid-alkaline (sensitivity) of ISFET were also studied. From the results the leakage current of source-drain, P-N junction like, decreases significantly after the implantation. However, this process damaged the devices so that the response to acid-alkaline are lost.

  Info
Periodical
Advanced Materials Research (Volumes 93-94)
Edited by
S. Suttiruengwong and W. Sricharussin
Pages
133-136
DOI
10.4028/www.scientific.net/AMR.93-94.133
Citation
R. Piyananjaratsri, W. Bunjongpru, E. Chaowicharat, O. Trithaveesak, K. Saeteaw, C. Hruanun, A. Poyai, "The Effect of Ion Implantation on ISFET-Sensing Membrane", Advanced Materials Research, Vols. 93-94, pp. 133-136, 2010
Online since
January 2010
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Price
$32.00
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