Paper Title:
Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering
  Abstract

This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O2:N2 timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E1(TO) at ~470 cm-1 and E1(LO) at ~570 cm-1 and also shifted with different O2:N2 timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O2:N2 timing is increased.

  Info
Periodical
Advanced Materials Research (Volumes 93-94)
Edited by
S. Suttiruengwong and W. Sricharussin
Pages
443-446
DOI
10.4028/www.scientific.net/AMR.93-94.443
Citation
A. Sungthong, P. Khomdet, S. Porntheeraphat, C. Hruanun, A. Poyai, J. Nukeaw, "Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering", Advanced Materials Research, Vols. 93-94, pp. 443-446, 2010
Online since
January 2010
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$32.00
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