The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier
| Periodical | Advanced Materials Research (Volumes 93 - 94) |
|---|---|
| Main Theme | Functionalized and Sensing Materials |
| Edited by | S. Suttiruengwong and W. Sricharussin |
| Pages | 578-582 |
| DOI | 10.4028/www.scientific.net/AMR.93-94.578 |
| Citation | A. Pankiew et al., 2010, Advanced Materials Research, 93-94, 578 |
| Online since | January, 2010 |
| Authors | A. Pankiew, W. Bunjongpru, N. Somwang, S. Porntheeraphat, S. Pratontep, S. Sophitpan, J. Nukaew, C. Hruanun, Amporn Poyai |
| Keywords | DC Magnetron Sputtering, Diffusion Barrier, Titanium Nitride TiN |
| Price | US$ 28,- |
Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.
