Paper Title:

Molecular Dynamic Simulation on Mechanism of Ultrasonic Wire Bonding in Electronic Package

Periodical Advanced Materials Research (Volumes 97 - 101)
Main Theme Manufacturing Science and Engineering I
Edited by Zhengyi Jiang and Chunliang Zhang
Pages 2639-2643
DOI 10.4028/www.scientific.net/AMR.97-101.2639
Citation Yong Ding et al., 2010, Advanced Materials Research, 97-101, 2639
Online since March, 2010
Authors Yong Ding, Jang Kyo Kim, Rong Yue Zheng
Keywords Bonding Strength, Contact Pressure, Molecular Dynamics (MD), Ultrasonic Wire Bonding
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Abstract

The microscopic mechanism of ultrasonic wire bonding is investigated by molecular dynamics simulation on the interfacial contact and adhesion. Considering that the real bonding area is in the state of plane strain, a two-dimensional atomic model is presented. Sutton-Chen potential is adopted for the interaction between gold atoms. Computational results indicate that a strong adhesion generates at the interface after intimate contact between the wire and the bond pad, and the adhesive force should be the mechanism of ultrasonic wire bonding. Combining the real contact area from finite element analysis with the adhesive force from molecular dynamics simulation, the bonding strength of ultrasonic wire bonding is estimated.