Silicon is widely used as the most important substrate material in integrated circuit and micro electronic devices field. Electrolytic in-process dressing (ELID) grinding technique is an effective grinding process especially for machining hard and brittle material. In this paper, using super fine abrasive wheel, sets of ELID cross grinding experiment were conducted for investigating the influences of various grinding conditions including grain sizes, rotation speeds of grinding wheel, rotation speeds of workpiece and ELID conditions on surface roughness during grinding silicon wafers. Surface roughness characteristics of fine ELID cross grinding for silicon wafers were discussed. In an optimized condition, surface roughness of 2.2 nm in Ra can be achieved by using #20000 wheel.