Ba0.6Sr0.4TiO3 materials doped with boron family Al3+, Ga3+ and In3+ are prepared by a ceramic process. The specimens possess condense microstructures. A low dielectric loss is achieved in the sample doped with In3+. Dielectric constants increase with decrease of the radii of doped ions. The results are discussed with respect to the interaction between oxygen ions and ions at B-site in ABO3 perovskite, which is revealed by Fourier transform infrared spectrum.