Electrical Resistivity, Thermopower and Magnetic Susceptibility of Nonstoichiometric BaVS3 |
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| Journal | Advances in Science and Technology (Volume 45) |
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| Volume | 11th International Ceramics Congress |
| Edited by | P. VINCENZINI |
| Pages | 113-117 |
| DOI | 10.4028/www.scientific.net/AST.45.113 |
| Citation | Tsukio Ohtani et al., 2006, Advances in Science and Technology, 45, 113 |
| Online since | October, 2006 |
| Authors | Tsukio Ohtani, A. Obana, K. Harada |
| Keywords | Magnetic Susceptibility, Metal-to-Semiconductor Transition, Nonstoichiometry, Power Factor, Quasi One-Dimensional Compound, Sulfide, Thermopower |
| Abstract | Quasi-one-dimensional sulfide BaVS3 is known to show a metal-to-semiconductor transition at ~70 K. In this study we investigated the effects of nonstoichiometry of BaVS3 on this transition. Single phase samples were obtained in the composition ranges of 0.95 ≤ 1±x ≤ 1.05 in BaV1±xS3, and of 0.95 ≤ 1-x ≤ 1.00 in Ba1-xVS3. All single phase samples showed the metal-to-semiconductor transition at ~70 K. Seebeck measurements revealed that the dominant carriers are electrons in all samples. BaV1.05S3 and Ba0.98VS3 showed relatively large values of the power factor of about 1.0 x 10-4W/K2m around 200 K. |
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