Paper Title:
Low Temperature MOCVD-Processed Alumina Coatings
  Abstract

We first present a Review about the preparation of alumina as thin films by the technique of MOCVD at low temperature (550°C and below). Then we present our results about thin films prepared by the low pressure MOCVD technique, using aluminium tri-isopropoxide as a source, and characterized by elemental analysis (EMPA, EDS, ERDA, RBS), FTIR, XRD and TGA. The films were grown in a horizontal, hot-wall reactor, with N2 as a carrier gas either pure or added with water vapour. The deposition temperature was varied in the range 350-550°C. The films are amorphous. Those prepared at 350°C without water added in the gas phase have a formula close to AlOOH. Those deposited above 415°C are made of pure alumina Al2O3. When water is added in the gas phase, the films are pure alumina whatever the deposition temperature.

  Info
Periodical
Edited by
P. VINCENZINI
Pages
1184-1193
DOI
10.4028/www.scientific.net/AST.45.1184
Citation
A. Gleizes, M. M. Şovar, D. Samelor, C. Vahlas, "Low Temperature MOCVD-Processed Alumina Coatings", Advances in Science and Technology, Vol. 45, pp. 1184-1193, 2006
Online since
October 2006
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