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A First Principles Study of Palladium Impurities in Silicon Carbide

Journal Advances in Science and Technology (Volume 45)
Volume 11th International Ceramics Congress
Edited by P. VINCENZINI
Pages 1969-1973
DOI 10.4028/www.scientific.net/AST.45.1969
Citation Guido Roma, 2006, Advances in Science and Technology, 45, 1969
Online since October, 2006
Authors Guido Roma
Keywords Defect, Diffusion, First-Principles Calculations, Irradiation Damage
Abstract

The main task of the silicon carbide layer in Triso-coated fuel particles for gas-cooled high temperature fission reactors is to retain fission products. It has been observed that some fission products, and in particular Pd, attack the SiC layer and are supposed to be responsible for corrosion of the material, which could facilitate fission products release. We used first principles calculations based on Density Functional Theory (DFT) in order to investigate the energetic, structural, and kinetic properties of Pd impurities inside SiC; we obtained solution and migration energies in pure SiC and discuss the thermodynamics of a few reactions that could possibly occur for Pd impurities in silicon carbide.

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