Paper Title:
Magnetoresistance Effect of La0.8Bi0.2MnO3/MgO/Co Heterojunction Device
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Periodical
Edited by
P. VINCENZINI
Pages
2566-2571
DOI
10.4028/www.scientific.net/AST.45.2566
Citation
T. Ogawa, H. Shindo, H. Takeuchi, Y. Koizumi, "Magnetoresistance Effect of La0.8Bi0.2MnO3/MgO/Co Heterojunction Device", Advances in Science and Technology, Vol. 45, pp. 2566-2571, 2006
Online since
October 2006
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Authors: Shao Qun Jiang, Gang Wang, Qi Zhang, Jun Nan Hou, Ze Hua Wang
Chapter 4: Materials for Microelectronic Industry and Magnetic Materials
Abstract:The La0.8SrxCa0.2-xMnO3 (x=0, 0.05 and 0.15) compounds were synthesized by...
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