Paper Title:
Atom Probe Tomography: Studying Reactions on Top of the Tip
  Abstract

Down-scaling is a major principle of modern technology. As a consequence, the stability of many technical devices is controlled by solid state reactions that proceed on the range of a few nanometres only. On such a short length scale even basic aspects of reaction physics as fundamental as e.g. the Ficks laws of diffusion, need to be reconsidered. Only very few dedicated techniques are suitable to study atomic transport and reactions with sufficient accuracy. Among them, the atom probe tomography is exceptional, as it allows the detection and localization of individual atoms with an accuracy of a lattice constant. An almost complete reconstruction of the 3D atomic arrangement of different atomic species gets possible. This article provides an overview on recent atom probe studies of reactive diffusion. After an introduction into the principles of the analysis method, physical mechanisms of solid state reactions are discussed in view of recent experiments at metallic thin film interfaces. How does nucleation of an interfacial product take place? In which way do grain boundaries influence the reaction? As a technical example, the stability of Cu/NiFe GMR sensor layers is discussed.

  Info
Periodical
Edited by
P. VINCENZINI and V. BUSCAGLIA
Pages
126-135
DOI
10.4028/www.scientific.net/AST.46.126
Citation
G. Schmitz, C. Ene, C. Lang, V. Vovk, "Atom Probe Tomography: Studying Reactions on Top of the Tip", Advances in Science and Technology, Vol. 46, pp. 126-135, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Dominique Mangelinck
Abstract:The effect of Pt and Ge on the stability of NiSi films has been examined. The addition of a small amount of Pt (5 at%) in the Ni film...
127
Authors: Charles R. Eddy, N.D. Bassim, Michael A. Mastro, R.L. Henry, Mark E. Twigg, Ronald T. Holm, James C. Culbertson, Philip G. Neudeck, J. Anthony Powell, Andrew J. Trunek
Abstract:Silicon carbide (SiC) has become the substrate of choice for III-N epilayers applied to electronic devices due to the lack of a native III-N...
1483
Authors: Sadahiro Tsurekawa, H. Fujii, V.A. Yardley, T. Matsuzaki, T. Watanabe
Abstract:Crystallization kinetics and texture evolution in iron-based amorphous alloys (Fe78Si9B13, Fe73.5Si13.5B9Nb3Cu1) under a magnetic field have...
1371
Authors: Zhen Nan Fu, Shou Mei Xiong
Abstract:A cellular automaton (CA) based model for two-dimensional simulation of the grain morphology of high pressure die casting magnesium alloy...
135
Authors: Olga Sukhopar, Günter Gottstein
Wednesday
Abstract:In the present study, a modified cellular automaton CORe (Cellular Operator for Recrystallization) was used to predict the recrystallization...
455