Hydrogen Diffusion Mechanisms and Hydrogen-Dopant Interactions in Diamond |
| Journal |
Advances in Science and Technology (Volume 46) |
| Volume |
Mass and Charge Transport in Inorganic Materials III |
| Edited by |
P. VINCENZINI and V. BUSCAGLIA |
| Pages |
63-72 |
| DOI |
10.4028/www.scientific.net/AST.46.63 |
| Online since |
October, 2006 |
| Authors |
Jacques Chevallier,
François Jomard,
Cecile Saguy,
R. Kalish,
A. Deneuville
|
| Keywords |
Complex Formation, Diamond, Diffusion, Doping, Hydrogen, Passivation |
| Abstract |
Electronic grade diamond is usually grown by Microwave Plasma assisted CVD from
a hydrogen rich CH4/H2 mixture, hence hydrogen is likely to be incorporated during growth. It
may thus affect the properties of the material. In this work, we present the state of the art on the
understanding of the diffusion properties of hydrogen and of the hydrogen-dopant interactions in
diamond. First, we show the existence of strong interactions between H and boron dopants in
diamond. The formation of H-acceptor pairs results in the passivation of the acceptors. Further,
we show that an excess of hydrogen in selected boron-doped diamond epitaxial layers can result
in the creation of H and boron-containing donors with a ionization energy of 0.36 eV (about half
the ionization energy of phosphorus). At 300 K, the n-type conductivity of hydrogenated borondoped
diamond is several orders of magnitude higher than the conductivity of phosphorus-doped
diamond. The formation process of these new donors is discussed. |
| Full Paper |
Get the full paper by clicking here
|
| Preview |
Free first page example |
