Paper Title:
Growth of Phosphorous Doped n-Type Diamond and the Electrical Properties
  Abstract

We have succeeded to grow high quality phosphorus doped n-type diamond thin films on {111} diamond substrates. Although the ionization energy of phosphorus donor is large (0.57 eV), the n-type conductivity is clearly observed by Hall measurements. The Hall mobility is as high as 660 cm2/V-sec at room temperature. In this paper, current status of n-type diamond research are mentioned mainly focused on the growth of high mobility n-type diamond and its electrical properties. High quality diamond growth has been carried out by surface pre-treatment of diamond substrate. The Hall measurements performed in a wide temperature range gives detailed information about the n-type conductivity nature.

  Info
Periodical
Edited by
P. VINCENZINI and E. CAPPELLI
Pages
1-8
DOI
10.4028/www.scientific.net/AST.48.1
Citation
S. Koizumi, "Growth of Phosphorous Doped n-Type Diamond and the Electrical Properties", Advances in Science and Technology, Vol. 48, pp. 1-8, 2006
Online since
October 2006
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