Growth of Phosphorous Doped n-Type Diamond and the Electrical Properties |
| Journal |
Advances in Science and Technology (Volume 48) |
| Volume |
Diamond and Other New Carbon Materials IV |
| Edited by |
P. VINCENZINI and E. CAPPELLI |
| Pages |
1-8 |
| DOI |
10.4028/www.scientific.net/AST.48.1 |
| Online since |
October, 2006 |
| Authors |
Satoshi Koizumi
|
| Keywords |
Chemical Vapor Deposition, Diamond, Hall-Effect, Semiconductor |
| Abstract |
We have succeeded to grow high quality phosphorus doped n-type diamond thin films on
{111} diamond substrates. Although the ionization energy of phosphorus donor is large (0.57 eV),
the n-type conductivity is clearly observed by Hall measurements. The Hall mobility is as high as
660 cm2/V-sec at room temperature. In this paper, current status of n-type diamond research are
mentioned mainly focused on the growth of high mobility n-type diamond and its electrical
properties. High quality diamond growth has been carried out by surface pre-treatment of diamond
substrate. The Hall measurements performed in a wide temperature range gives detailed information
about the n-type conductivity nature. |
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