Paper Title:
Growth and Characterization of Tungsten Oxide for Applications in Nanoelectronics
  Abstract

Tungsten oxide nanorods were prepared in a hot filament chemical vapor deposition (HFCVD) reactor. A mixture of gases containing hydrogen, oxygen or hydrogen and methane mixed with water vapor were passed into a quartz glass jar reactor and activated using a heated tungsten filament. The resulting deposits were characterized by transmission electron microscopy (TEM), x-ray diffraction (XRD), and Raman Spectroscopy. The deposit consisted of tungsten oxide nanorods (5 – 10 nm diameter and 50 – 75 nm long) and tungsten nanospheres with diameters of ~50nm. The tungsten oxide is then reduced to metallic tungsten by annealing in a hydrogen environment.

  Info
Periodical
Edited by
P. VINCENZINI and E. CAPPELLI
Pages
113-118
DOI
10.4028/www.scientific.net/AST.48.113
Citation
K. Sridharan, K. P. Roberts, S. Mitra, "Growth and Characterization of Tungsten Oxide for Applications in Nanoelectronics", Advances in Science and Technology, Vol. 48, pp. 113-118, 2006
Online since
October 2006
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Price
$32.00
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