Nanocrystalline Diamond Films by Bias Enhanced Nucleation and Argon Assisted Growth in a HFCVD System |
| Journal |
Advances in Science and Technology (Volume 48) |
| Volume |
Diamond and Other New Carbon Materials IV |
| Edited by |
P. VINCENZINI and E. CAPPELLI |
| Pages |
44-49 |
| DOI |
10.4028/www.scientific.net/AST.48.44 |
| Online since |
October, 2006 |
| Authors |
Th. Dikonimos Makris,
Mauro Falconieri,
Stefano Gianoglio,
L. Giorgi,
R. Giorgi,
Nicola Lisi,
Elena Salernitano
|
| Keywords |
Bias Enhanced Nucleation, Hot Filament CVD, Nanocrystalline Diamond |
| Abstract |
The achievement of nanosmooth, ultrathin diamond coatings with nanosized grains is
mandatory for the successful utilization of diamond in areas such as microelectromechanical
systems, field emission and surface acoustic waves devices.
The bias enhanced nucleation technique (BEN) allows to achieve high nucleation density diamond
films, where the average distance between diamond nuclei can be as low as 10-20nm. Moreover by
diluting the gas precursors (H2 and CH4) into noble gas (Ar, He) during growth, the formation of
larger crystals can be inhibited, giving rise to nanocrystalline films without a degradation of the
film quality, such as the presence of more graphitic bonds.
In this paper we report the growth of ultrathin, smooth, high quality nanodiamond films obtained by
combining the two techniques in a HFCVD reactor.
A variety of nanocrystalline diamond films with a grain size as low as 10nm and thickness up to
1μm were obtained. The nucleation process and ensuing growth of the film were monitored by
SEM observation. Spectroscopic measurements were also performed to study the microstructure
and to assess the quality of the deposited material. |
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