Paper Title:
Surface Conductivity of Diamond: A Novel Doping Mechanism
  Abstract

One of the most amazing features of diamond is the p-type surface conductivity which occurs when intrinsic material is hydrogen terminated and brought into contact with appropriately chosen adsorbates. Experiments during the last decade have revealed the different roles of the surface acceptors and of the covalent carbon-hydrogen surface bonds: providing unoccupied electronic states, and lowering the energy barrier for electron transfer from the diamond, respectively. The simplest and historically first method to supply surface acceptors, i.e. exposing hydrogenated diamond to air, provides, unfortunately, the most complex electronic system acting as surface acceptors, namely solvated ions within atmospheric wetting layers. In that case electron transfer is accompanied by a red-ox reaction that finally induces the hole accumulation. A much simpler case of transfer doping has been demonstrated for C60F48 as molecular surface accpeptors. In this case, the doping yield as a function of surface coverage can be modelled quantitatively by the transfer doping mechanism. Also, pure C60 can be adopted for transfer doping, but the formation of the van-der-Waals solid is required in this case to circumvent the electron correlation energy for charge transfer to a single fullere cage. The C60 layers can be stabilized by oxygen-mediated polymerisation without loosing their doping efficiency.

  Info
Periodical
Edited by
P. VINCENZINI and E. CAPPELLI
Pages
93-102
DOI
10.4028/www.scientific.net/AST.48.93
Citation
J. Ristein, P. Strobel, L. Ley, "Surface Conductivity of Diamond: A Novel Doping Mechanism", Advances in Science and Technology, Vol. 48, pp. 93-102, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hideharu Matsuura, K. Sugiyama, Kimito Nishikawa, T. Nagata, N. Fukunaga
447
Authors: Hideharu Matsuura, K. Aso, S. Kagamihara, Hisaomi Iwata, T. Ishida, K. Nishikawa
751
Authors: Jacques Chevallier, T. Kociniewski, Cecile Saguy, R. Kalish, C. Cytermann, M. Barbé, D. Ballutaud, François Jomard, A. Deneuville, C. Baron, James E. Butler, Satoshi Koizumi
Abstract:The n-type doping of diamond with phosphorus suffers from defects reducing the electron mobilities and inducing some degree of compensation....
703
Authors: Michael Krieger, Kurt Semmelroth, Heiko B. Weber, Gerhard Pensl, Martin Rambach, Lothar Frey
Abstract:We report on admittance spectroscopy (AS) investigations taken on aluminum (Al)- doped 6H-SiC crystals at low temperatures. Admittance...
367
Authors: Hideharu Matsuura, Tatsuya Morine, Shinji Nagamachi
Chapter 4: Processing of SiC
Abstract:Because Al and B (elements of III group) in SiC are deep-level acceptors and these acceptors cannot reduce the resistivity of p-type SiC very...
685